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Energy band structure of InAs at 22 K, calculated by the LASTO method. | Download Scientific Diagram
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Band parameters of GaAs, InAs, InP, and InSb in the 40-band k⋅p model: Journal of Applied Physics: Vol 107, No 4
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Structural, morphological and magnetotransport properties of composite semiconducting and semimetallic InAs/GaSb superlattice structure - Materials Advances (RSC Publishing) DOI:10.1039/D0MA00046A
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1. Empirical tight-binding sp3s* band structure of GaAs, GaP, AlAs, InAs, C (diamond) and Si — nextnano Manual
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PDF] Negative band gap bowing in epitaxial InAs/GaAs alloys and predicted band offsets of the strained binaries and alloys on various substrates | Semantic Scholar
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Band parameters of GaAs, InAs, InP, and InSb in the 40-band k⋅p model: Journal of Applied Physics: Vol 107, No 4
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Mapping of the electronic band gap along the axis of a single InAs/InSb x As 1−x heterostructured nanowire - Nanoscale (RSC Publishing) DOI:10.1039/C6NR06841C
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Bandgap energy determination of InAsSb epilayers grown by molecular beam epitaxy on GaAs substrates - ScienceDirect
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